Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures

摘要

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-nAl_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximumsteady-state spin polarization of approximately 13% at 2 K is measured in twotypes of heterostructures. The injected spin polarization at 2 K is calculatedto be 27% based on a calibration of the spin detector using Hanle effectmeasurements. Although the dependence on electrical bias conditions isqualitatively similar to Fe-based spin injection devices of the same design,the spin polarization injected from Co_2MnGe decays more rapidly withincreasing temperature.